High-density (4.4F/sup 2/) NAND flash technology using Super-Shallow Channel Profile (SSCP) engineering

Author

Arai, F. ; Arai, N. ; Satoh, S. ; Yaegashi, T. ; Kamiya, E. ; Matsunaga, Y. ; Takeuchi, Y. ; Kamata, H. ; Shimizu, A. ; Ohtami, N. ; Kai, N. ; Takahashi, S. ; Moriyama, W. ; Kugimiya, K. ; Miyazaki, S. ; Hirose, T. ; Meguro, H. ; Hatakeyama, K. ; Shimizu,

Author_Institution

Memory LSI Res. & Dev. Center, Toshiba Corp., Yokohama, Japan

fYear

2000

fDate

10-13 Dec. 2000

Firstpage

775

Lastpage

778

Abstract

This paper describes a novel high-density 4.4F/sup 2/ (F: feature size) NAND flash memory with the cell size of 0.074 um/sup 2/ for 0.13 um design rule. To minimize the cell size, two key technologies are introduced as follows. (1) The Super-Shallow Channel Profile (SSCP) engineering and (2) a novel layout of the NAND string that consists of 32 cells. The NAND cells fabricated by the above technologies have demonstrated good cell characteristics. This 4.4F/sup 2/ NAND flash technology is highly advantageous for low cost flash memories of 4 Gbit and beyond for mass storage applications.

Keywords

NAND circuits; cellular arrays; doping profiles; flash memories; integrated circuit design; 0.13 micron; 4 Gbit; NAND string; SSCP; Super-Shallow Channel Profile; cell characteristics; cell size; design rule; high-density NAND flash technology; low cost flash memories; mass storage applications; Ambient intelligence; Costs; Design engineering; Flash memory; Isolation technology; Large scale integration; Manufacturing processes; Microelectronics; Pulp manufacturing; Semiconductor device manufacture;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-6438-4

Type

conf

DOI

10.1109/IEDM.2000.904432

Filename

904432