Title :
A novel Uniform-Channel-Program Erase (UCPE) flash EEPROM using an isolated P-well structure
Author :
Li, C.-N.B. ; Farenc, D. ; Singh, R. ; Yater, J. ; Liu, S. ; Chia-Lin Chang ; Bagchi, S. ; Chen, K. ; Ingersoll, P. ; Kuo-Tung Chang
Author_Institution :
Non-Volatile Memory Technol. Center, Motorola Inc., Austin, TX, USA
Abstract :
This paper describes a novel Uniform-Channel-Program-Erase (UCPE) flash EEPROM technology using an isolated P-well structure for high performance and low power applications. The UCPE bit cell utilizes Fowler-Nordheim (FN) tunneling in the channel region for both program and erase operations. By implementing a 0.55 /spl mu/m trench isolation and a triple well process, an experimental UCPE bit cell has been demonstrated in a 0.18 /spl mu/m technology.
Keywords :
flash memories; isolation technology; low-power electronics; tunnelling; 0.18 micron; 0.55 micron; Fowler-Nordheim tunneling; P-well structure; UCPE bit cell; flash EEPROM; low power operation; trench isolation; triple well process; uniform channel program erase; Boosting; CMOS technology; Charge pumps; Copper; EPROM; Energy consumption; Flash memory; Isolation technology; Tunneling; Voltage;
Conference_Titel :
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6438-4
DOI :
10.1109/IEDM.2000.904433
