Title :
In-doped ZnO single crystals as a novel laser material
Author :
Li, L.E. ; Demyanets, L.N.
Author_Institution :
Inst. of Crystallogr., RAS, Moscow, Russia
Abstract :
As-grown ZnO:In crystalline plates demonstrate strong near-band-edge emission related to exciton recombination (380 nm - free excitons; 395 and 406 nm - excitons localized in the impurity centers). Fabry-Perot mode structure is observed for last two bands. Dramatically increasing narrow line (396 nm, Δλ ~ 3.3 nm) is connected with EHP recombination.
Keywords :
II-VI semiconductors; excitons; impurities; indium; optical materials; semiconductor doping; spectral line narrowing; wide band gap semiconductors; zinc compounds; EHP recombination; Fabry-Perot mode structure; ZnO:In; exciton localization; exciton recombination; impurity centers; laser material; near-band-edge emission; single crystals; wavelength 380 nm; wavelength 395 nm; wavelength 406 nm; Crystals; Excitons; Optical fibers; Optical pumping; Optical resonators; Zinc oxide;
Conference_Titel :
Laser and Fiber-Optical Networks Modeling (LFNM), 2010 10th International Conference on
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-6994-9
DOI :
10.1109/LFNM.2010.5624172
