DocumentCode
2887337
Title
In-doped ZnO single crystals as a novel laser material
Author
Li, L.E. ; Demyanets, L.N.
Author_Institution
Inst. of Crystallogr., RAS, Moscow, Russia
fYear
2010
fDate
12-14 Sept. 2010
Firstpage
5
Lastpage
6
Abstract
As-grown ZnO:In crystalline plates demonstrate strong near-band-edge emission related to exciton recombination (380 nm - free excitons; 395 and 406 nm - excitons localized in the impurity centers). Fabry-Perot mode structure is observed for last two bands. Dramatically increasing narrow line (396 nm, Δλ ~ 3.3 nm) is connected with EHP recombination.
Keywords
II-VI semiconductors; excitons; impurities; indium; optical materials; semiconductor doping; spectral line narrowing; wide band gap semiconductors; zinc compounds; EHP recombination; Fabry-Perot mode structure; ZnO:In; exciton localization; exciton recombination; impurity centers; laser material; near-band-edge emission; single crystals; wavelength 380 nm; wavelength 395 nm; wavelength 406 nm; Crystals; Excitons; Optical fibers; Optical pumping; Optical resonators; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Laser and Fiber-Optical Networks Modeling (LFNM), 2010 10th International Conference on
Conference_Location
Sevastopol
Print_ISBN
978-1-4244-6994-9
Type
conf
DOI
10.1109/LFNM.2010.5624172
Filename
5624172
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