DocumentCode
2887349
Title
Liner-supported cylinder (LSC) technology to realize Ru/Ta/sub 2/O/sub 5//Ru capacitor for future DRAMs
Author
Fukuzumi, Y. ; Suzuki, T. ; Sato, A. ; Ishibashi, Yutaka ; Hatada, A. ; Nakamura, K. ; Tsunoda, K. ; Fukuda, M. ; Lin, J. ; Nakabayashi, M. ; Minakata, H. ; Shimada, A. ; Kurahashi, T. ; Tomita, H. ; Matsunaga, D. ; Hieda, K. ; Hashimoto, K. ; Nakamura, S
Author_Institution
Memory LSI R&D Center, Toshiba Corp., Japan
fYear
2000
fDate
10-13 Dec. 2000
Firstpage
793
Lastpage
796
Abstract
The concept of liner-supported cylinder (LSC) technology to realize robust formation of cylindrical electrodes with Ru, which has advantages to bring out the best of Ta/sub 2/O/sub 5/ performance, is described. With experimental results including DRAM functionality, we show that LSC-Ta/sub 2/O/sub 5/ capacitor is a promising candidate to realize 0.10 /spl mu/m DRAMs and beyond.
Keywords
DRAM chips; MIM devices; capacitors; electrodes; ruthenium; tantalum compounds; 0.10 micron; DRAM; MIM capacitor; Ru-Ta/sub 2/O/sub 5/-Ru; cylindrical electrode; liner supported cylinder technology; Capacitance; Capacitors; Electrodes; Engine cylinders; Leakage current; Planarization; Random access memory; Robustness; Tin; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-6438-4
Type
conf
DOI
10.1109/IEDM.2000.904437
Filename
904437
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