• DocumentCode
    2887350
  • Title

    Power MOS Technology Invades Telecom

  • Author

    Blanchard, R.A. ; Tubis, Chris J. ; Buchanan, Walter

  • Author_Institution
    Siliconix, inc., 2201 Laurelwood Road, Santa Clara, California 95054
  • fYear
    1984
  • fDate
    4-7 Nov. 1984
  • Firstpage
    448
  • Lastpage
    454
  • Abstract
    The steady march of semiconductor device technology is most publicized in the high density, low-voltage digital area. Another area, power control and power conversion technology, is moving forward as rapidly, but in a less visible fashion. This paper discusses the progress being made in power MOS device and circuit technology and its impact on power control. The development of new devices and integrated circuits is emphasized. These devices include depletion-mode MOSPOWER transistors, MOS-gated 4-layer devices, and low on-resistance MOSPOWER transistors. Specific device applications in power conversion circuits are covered. Integrated circuits for use in Telecommunications Power Conversion systems are also discussed. One new I.C., a one-watt 48-to-5 volt monolithic S.M.P.S., is presented as an example of the types of circuits that are becoming available.
  • Keywords
    Communication industry; Costs; Electric resistance; Integrated circuit technology; MOS devices; MOSFETs; Power control; Power conversion; Telecommunications; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Telecommunications Energy Conference, 1984. INTELEC '84. International
  • Conference_Location
    New Orleans, LA, USA
  • Type

    conf

  • DOI
    10.1109/INTLEC.1984.4794164
  • Filename
    4794164