DocumentCode
2887359
Title
A Continuous Model for MOSFET VT Matching Considering Additional Length Effects
Author
Bordez, Samuel ; Cathignol, Augustin ; Rochereau, Krysten
Author_Institution
STMicroelectron., Crolles
fYear
2007
fDate
19-22 March 2007
Firstpage
226
Lastpage
229
Abstract
MOS transistor threshold voltage matching is usually modeled proportionally to reverse square root of gate area. Yet this model is not satisfactory when discontinuities are observed. In this paper, a continuous matching model with only two parameters is given. It is obtained by analyzing impact of short channel effects on matching degradation.
Keywords
MOSFET; semiconductor device models; MOS transistor threshold voltage matching; MOSFET; continuous matching model; length effects; matching degradation; short channel effects; Degradation; Electronic mail; Geometry; MOSFET circuits; Microelectronics; Solid modeling; Stress; Testing; Threshold voltage; Uncertainty; MOSFET; Matching; Short Channel Effect;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronic Test Structures, 2007. ICMTS '07. IEEE International Conference on
Conference_Location
Tokyo
Print_ISBN
1-4244-0781-8
Electronic_ISBN
1-4244-0781-8
Type
conf
DOI
10.1109/ICMTS.2007.374489
Filename
4252439
Link To Document