Title :
A Continuous Model for MOSFET VT Matching Considering Additional Length Effects
Author :
Bordez, Samuel ; Cathignol, Augustin ; Rochereau, Krysten
Author_Institution :
STMicroelectron., Crolles
Abstract :
MOS transistor threshold voltage matching is usually modeled proportionally to reverse square root of gate area. Yet this model is not satisfactory when discontinuities are observed. In this paper, a continuous matching model with only two parameters is given. It is obtained by analyzing impact of short channel effects on matching degradation.
Keywords :
MOSFET; semiconductor device models; MOS transistor threshold voltage matching; MOSFET; continuous matching model; length effects; matching degradation; short channel effects; Degradation; Electronic mail; Geometry; MOSFET circuits; Microelectronics; Solid modeling; Stress; Testing; Threshold voltage; Uncertainty; MOSFET; Matching; Short Channel Effect;
Conference_Titel :
Microelectronic Test Structures, 2007. ICMTS '07. IEEE International Conference on
Conference_Location :
Tokyo
Print_ISBN :
1-4244-0781-8
Electronic_ISBN :
1-4244-0781-8
DOI :
10.1109/ICMTS.2007.374489
