DocumentCode :
2887383
Title :
Novel high-power superluminescent diodes with wide active channels
Author :
Kostin, Yu O. ; Lobintsov, A.A. ; Yakubovich, S.D.
Author_Institution :
SUPERLUM DIODES Ltd., Moscow, Russia
fYear :
2010
fDate :
12-14 Sept. 2010
Firstpage :
10
Lastpage :
12
Abstract :
Two types of superluminescent diodes (SLDs) based on DQW (InGa)As/(GaAl)As/GaAs nanostructures with 25 μm-width multimode active channels emitting at 890 nm and 950nm were studied. They ensure CW optical power of more than 100 mW ex standard 50 μm multimode fiber (MMF).
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; nanophotonics; quantum well devices; superluminescent diodes; CW optical power; InGaAs-GaAlAs-GaAs; high-power superluminescent diodes; multimode active channels; nanostructures; quantum well diodes; size 25 mum; wavelength 890 nm; wavelength 950 nm; Couplings; Gallium arsenide; Laser modes; Optical fiber networks; Optical waveguides; Power generation; Superluminescent diodes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Laser and Fiber-Optical Networks Modeling (LFNM), 2010 10th International Conference on
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-6994-9
Type :
conf
DOI :
10.1109/LFNM.2010.5624174
Filename :
5624174
Link To Document :
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