Femtosecond laser-induced self-ordered nanostructures in semiconducting 4H-SiC

Author

Makin, V.S. ; Makin, R.S. ; Silantjeva, I.A.

Author_Institution

Res. Inst. for Complex Testing of Opto-Electron. Devices, Sosnovy Bor, Russia

fYear

2010

fDate

12-14 Sept. 2010

Firstpage

13

Lastpage

15

Abstract

The experimental results causing the trench of subwavelength nanostructures formation in semiconductor´s 4H-SiC surface and inside volume along the femtosecond beam path are considered. The given qualitative explanation of the observed phenomenon is based on universal polariton model of laser-induced material damage with extension of excitation the cylindrical surface plasmon polaritons and their interference with opposite wave vectors directions following the semiconductor´s cylindrical rode metallization.

Keywords

high-speed optical techniques; laser beam effects; metallisation; nanofabrication; nanostructured materials; polaritons; silicon compounds; surface plasmons; surface treatment; wide band gap semiconductors; SiC; cylindrical surface plasmon polaritons; femtosecond beam path; femtosecond laser-induced self-ordered nanostructures; laser-induced material damage; semiconductor cylindrical rode metallization; semiconductor surface; subwavelength nanostructures; universal polariton model; wave vectors; Laser beams; Laser excitation; Laser modes; Nanostructures; Periodic structures; Semiconductor lasers; Ultrafast optics;

fLanguage

English

Publisher

ieee

Conference_Titel

Laser and Fiber-Optical Networks Modeling (LFNM), 2010 10th International Conference on

Conference_Location

Sevastopol

Print_ISBN

978-1-4244-6994-9

Type

conf

DOI

10.1109/LFNM.2010.5624175

Filename

5624175