• DocumentCode
    2887447
  • Title

    A study on reliability of ni plating in a high temperature power device

  • Author

    Ishikawa, Takayuki ; Oshidari, Toshikazu ; Sugihara, Hiromi ; Yu, Qiang

  • Author_Institution
    Dept. of Mech. Eng. & Mater. Sci., Yokohama Nat. Univ., Yokohama, Japan
  • fYear
    2010
  • fDate
    2-5 June 2010
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    Recently, the SiC chip for power devices had been developed to downsize the cooling system, because the operative temperature of SiC chip can be increase to over 300°C. However it is necessary to realize low temperature mounting and high reliability in high temperature. The author´s group has proposed a new method using Ag-Nano material to mount the SiC chip on a Al board. The Ag-Nano can be mounted firmly on Al board with about 300°C, the stress relaxation facility can be given to the pure aluminum substrate side. In addition Ni plating was used as the final finish. As a result, Ni plating becomes as a new weak point. In this study, the authors proposed a new experimental method for investigating the reliability issues of the Ni plating in the Ag-Nano joint. Three point bending test is performed to evaluate the mechanical properties of Ni plating. A test specimen with Ni plating and a test specimen without plating in same size are prepared for a bend test, properties of Ni plating are calculated by comparing difference of those bend tests. And the fatigue strength was investigated by cyclic bending tests.
  • Keywords
    bending; cooling; electroplating; fatigue testing; integrated circuit reliability; stress relaxation; thermal management (packaging); Ag-nano material; Ni plating; SiC; SiC chip; cooling system; cyclic bending test; fatigue strength; high temperature power device; mechanical property; reliability; stress relaxation; temperature mounting; three point bending test; Aluminum; Cooling; Fatigue; Mechanical factors; Performance evaluation; Power system reliability; Silicon carbide; Stress; Temperature; Testing; Ag-Nano; SiC; fatigue strength; low temperature mounting; packaging;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm), 2010 12th IEEE Intersociety Conference on
  • Conference_Location
    Las Vegas, NV
  • ISSN
    1087-9870
  • Print_ISBN
    978-1-4244-5342-9
  • Electronic_ISBN
    1087-9870
  • Type

    conf

  • DOI
    10.1109/ITHERM.2010.5501283
  • Filename
    5501283