On a possibility to reduce the electron beam energy used for pumping of ZnSe-based green semiconductor laser heterostructures

Author

Zverev, M.M. ; Gamov, N.A. ; Zdanova, E.V. ; Studionov, V.B. ; Peregoudov, D.V. ; Ivanov, S.V. ; Sedova, I.V. ; Sorokin, S.V. ; Gronin, S.V. ; Kop´ev, P.S.

Author_Institution

Moscow State Inst. of Radio Eng., Electron. & Automations, Moscow, Russia

fYear

2010

fDate

12-14 Sept. 2010

Firstpage

19

Lastpage

22

Abstract

Temperature dependences of electron threshold current density in ZnSe-based laser heterostructures for the temperature range of 12-300 K and electron energies of 3.5-8.1 keV have been studied in detail. The minimum value of threshold current density of 0.2 A/cm² has been measured at the electron energy E = 8 keV and temperature T = 50 K. The analysis of experimental and simulated data indicates on the possibility to reduce the electron energy at room temperature down to 1-2 keV value.

Keywords

II-VI semiconductors; cadmium compounds; current density; electron beam pumping; magnesium compounds; semiconductor lasers; wide band gap semiconductors; zinc compounds; CdSe-ZnSe-ZnMgSSe; electron beam energy; electron threshold current density; electron volt energy 3.5 keV to 8.1 keV; electron-beam-pumped green semiconductor laser heterostructures; room temperature electron energy; temperature 12 K to 300 K; temperature 293 K to 298 K; temperature dependence; Electron beams; Laser beams; Laser excitation; Pump lasers; Semiconductor lasers; Temperature dependence; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Laser and Fiber-Optical Networks Modeling (LFNM), 2010 10th International Conference on

Conference_Location

Sevastopol

Print_ISBN

978-1-4244-6994-9

Type

conf

DOI

10.1109/LFNM.2010.5624177

Filename

5624177