Calculation of energy characteristics of Si1−xGex-Si quantum-well heterostructures using k·p method

Numerical calculations of energy characteristics of quantum-well structures based on Si_1-xGe_x-Si have been performed using the four-band k·p method. It is shown that varying the thickness of the active layer and the height and width of potential barriers one can control the frequency ω of optical transitions. The analytical expressions for ħω are established, which are in good agreement with the numerical calculations by the k·p method, exactly define the limits of changes in ħω.