Band engineering of complex asymmetric multiple quantum wells for optically pumped semiconductor disk lasers

Author

Shulika, Oleksiy V. ; Sukhoivanov, Igor A. ; Klymenko, Mykhailo V. ; Safonov, Ivan M. ; Lucio, Jose A Andrade ; Perez, Arturo Garcia ; Rojas-Laguna, Roberto

Author_Institution

Photonics Lab., Kharkov Nat. Univ. of Radio Electron., Kharkov, Ukraine

fYear

2010

fDate

12-14 Sept. 2010

Firstpage

26

Lastpage

29

Abstract

Asymmetric multiple quantum well active regions for optically-pumped semiconductor disk lasers (OPS-DLs) are designed employing wave function engineering within GaAs/AlGaAs material system, which provide simultaneously good electronic confinement, large gain and effective carrier transport. Experimental investigation has shown that such an approach gives record values of the conversion efficiency among OPSDLs and provides high values of the output power.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; optical pumping; quantum well lasers; surface emitting lasers; wave functions; GaAs-AlGaAs; band engineering; complex asymmetric multiple quantum wells; conversion efficiency; effective carrier transport; electronic confinement; optical gain; optically pumped semiconductor disk lasers; wave function engineering; Laser excitation; Pump lasers; Radiative recombination; Tunneling; Vertical cavity surface emitting lasers; GaAs/AlGaAs; OPSDL; Optically-pumped semiconductor disk lasers; VEC-SEL; band diagram; vertical external-cavity surface-emitting lasers; wave function engineering;

fLanguage

English

Publisher

ieee

Conference_Titel

Laser and Fiber-Optical Networks Modeling (LFNM), 2010 10th International Conference on

Conference_Location

Sevastopol

Print_ISBN

978-1-4244-6994-9

Type

conf

DOI

10.1109/LFNM.2010.5624179

Filename

5624179