• DocumentCode
    2887482
  • Title

    Novel parameter extraction method for low field drain current of nano-scaled MOSFETs

  • Author

    Tanaka, Takuji

  • Author_Institution
    FUJITSU Ltd., Tokyo
  • fYear
    2007
  • fDate
    19-22 March 2007
  • Firstpage
    265
  • Lastpage
    267
  • Abstract
    We developed parameter extraction method based on a BSIM3-like compact model to analyze low field drain current with size dependent mobility in nano-scaled MOSFETs. Our new straightforward algorithm has made it possible to automatically extract model parameters with high accuracy and robustness. It is applicable to wide variation of device sizes, structures and materials.
  • Keywords
    MOSFET; carrier mobility; electric current; nanoelectronics; semiconductor device models; BSIM3-like compact model; automatic parameters extraction model; low field drain current; nanoscaled MOSFET; parameter extraction method; size dependent mobility; Current measurement; Equations; Etching; Intrusion detection; MOSFETs; Microelectronics; Parameter extraction; Robustness; Stress; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronic Test Structures, 2007. ICMTS '07. IEEE International Conference on
  • Conference_Location
    Tokyo
  • Print_ISBN
    1-4244-0781-8
  • Electronic_ISBN
    1-4244-0781-8
  • Type

    conf

  • DOI
    10.1109/ICMTS.2007.374496
  • Filename
    4252446
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2887482