DocumentCode
2887586
Title
New yield models for DSM manufacturing
Author
Fei, Y. ; Simon, P. ; Maly, W.
Author_Institution
Dept. of Electr. & Comput. Eng., Carnegie Mellon Univ., Pittsburgh, PA, USA
fYear
2000
fDate
10-13 Dec. 2000
Firstpage
845
Lastpage
848
Abstract
A set of new yield models has been proposed and evaluated. These models use yield-relevant design attributes instead of traditionally applied die or critical areas. In conducted analysis, comparison of yield modeling accuracy to the well-known models was made. The new models are useful in DSM manufacturing and the design domain.
Keywords
ULSI; design for manufacture; integrated circuit modelling; integrated circuit yield; DSM manufacturing; conducted analysis; design domain; modeling accuracy; yield models; yield-relevant design attributes; Fitting; Manufacturing processes; Parameter estimation; Pulp manufacturing; Reactive power; Semiconductor device manufacture; Semiconductor device modeling; Virtual manufacturing; Yield estimation;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2000. IEDM '00. Technical Digest. International
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-6438-4
Type
conf
DOI
10.1109/IEDM.2000.904449
Filename
904449
Link To Document