DocumentCode
2887627
Title
A 60ns 4Mb DRAM in a 300mil DIP
Author
Sumi, Takuya ; Taniguchi, Takafumi ; Kishimoto, Mikio ; Hirano, Harutoyo ; Kuriyama, H. ; Nishimoto, Takuya ; Oishi, H. ; Tetakawa, S.
Author_Institution
Matsushita Kyoto Research Laboratory, Device Development Department, Kyoto, Japan
Volume
XXX
fYear
1987
fDate
0-0 Feb. 1987
Firstpage
282
Lastpage
283
Keywords
Capacitance; Content addressable storage; Decoding; Electronics packaging; Personnel; Plastics; Power dissipation; Random access memory; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1987 IEEE International
Conference_Location
New York, NY, USA
Type
conf
DOI
10.1109/ISSCC.1987.1157106
Filename
1157106
Link To Document