Title :
Microscopic statistical theory of Inhomogeneous broadening in InGaN/GaN quantum wells
Author :
Klymenko, Mykhailo ; Shulika, Oleksiy
Author_Institution :
Kharkov Nat. Univ. of Radio Electron., Kharkov, Ukraine
Abstract :
Microscopic statistical theory of inhomogeneous broadening in InGaN/GaN quantum-well structures is developed. It is shown that inhomogeneous broadening can be described as energy-dependent daphasing time. Explicit relation between inhomogeneous broadening and spectral power density of the lateral interface potential fluctuations is derived.
Keywords :
III-V semiconductors; fluctuations; semiconductor quantum wells; spectral line broadening; statistical analysis; wide band gap semiconductors; InGaN-GaN; energy-dependent daphasing time; lateral interface potential fluctuations; microscopic statistical theory; quantum wells; spectral power density; Approximation methods; Gallium nitride; Laser modes; Microscopy; Nonhomogeneous media; Optical superlattices; Scattering;
Conference_Titel :
Laser and Fiber-Optical Networks Modeling (LFNM), 2010 10th International Conference on
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-6994-9
DOI :
10.1109/LFNM.2010.5624202
