DocumentCode
2888004
Title
Large-signal transistor device measurement
Author
Tsang, K.F. ; Tang, C.W. ; Yip, P.C.L ; Morgan, G.B. ; Chan, W.S.
Author_Institution
Dept. of Electron. Eng., City Polytech. of Hong Kong, Kowloon, Hong Kong
fYear
1991
fDate
16-17 Jun 1991
Firstpage
977
Abstract
A new method for characterizing transistors operating in the nonlinear region has been presented by some of the present authors (See Proceedings Intern. AMSE Conference Signals & Systems, vol.3, p.105-111, Sept., 1990). In this paper, more measurement results are presented to verify the feasibility of the method developed. The trends of variation of large signal S-parameters at different power levels are shown
Keywords
S-parameters; semiconductor device testing; transistors; large signal S-parameters; large signal characterisation; nonlinear region; transistor device measurement; Area measurement; Cities and towns; Frequency measurement; Gain measurement; Impedance measurement; Power engineering and energy; Power measurement; Scattering parameters; System testing; Systems engineering and theory;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1991. Conference Proceedings, China., 1991 International Conference on
Conference_Location
Shenzhen
Type
conf
DOI
10.1109/CICCAS.1991.184528
Filename
184528
Link To Document