Title :
Single-chip NMOS AGC amplifiers for Gb/s lightwave systems
Author :
Jindal, Rohit ; Hofstatter, E. ; Mizuhara, O.
Author_Institution :
AT&T Bell Laboratories, Murray Hill, NJ, USA
Abstract :
A cascade of 8 gain-controlled stages providing a maximum gain of 50dB and a 70dB dynamic range will be reported A 900MHz bandwidth has been attained in an NMOS chip employing 0.75μm gate lengths, with a power dissipation of 250mW.
Keywords :
Bandwidth; Circuit noise; Dynamic range; Frequency; MOS devices; Optical amplifiers; Optical receivers; Power dissipation; Silicon; Stimulated emission;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1987 IEEE International
Conference_Location :
New York, NY, USA
DOI :
10.1109/ISSCC.1987.1157135
