DocumentCode
2888138
Title
Single-chip NMOS AGC amplifiers for Gb/s lightwave systems
Author
Jindal, Rohit ; Hofstatter, E. ; Mizuhara, O.
Author_Institution
AT&T Bell Laboratories, Murray Hill, NJ, USA
Volume
XXX
fYear
1987
fDate
0-0 Feb. 1987
Firstpage
170
Lastpage
171
Abstract
A cascade of 8 gain-controlled stages providing a maximum gain of 50dB and a 70dB dynamic range will be reported A 900MHz bandwidth has been attained in an NMOS chip employing 0.75μm gate lengths, with a power dissipation of 250mW.
Keywords
Bandwidth; Circuit noise; Dynamic range; Frequency; MOS devices; Optical amplifiers; Optical receivers; Power dissipation; Silicon; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1987 IEEE International
Conference_Location
New York, NY, USA
Type
conf
DOI
10.1109/ISSCC.1987.1157135
Filename
1157135
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