DocumentCode
2888238
Title
Gate oxide reliability assessment of a SiC MOSFET for high temperature aeronautic applications
Author
Santini, Thomas ; Sebastien, Morand ; Florent, Miller ; Phung, Luong-Viet ; Allard, Bruno
Author_Institution
EADS Innovation Works, Suresnes, France
fYear
2013
fDate
3-6 June 2013
Firstpage
385
Lastpage
391
Abstract
With the trend toward more electrical aircraft, Silicon Carbide power switches could be heavily used for high temperatures applications within the aircraft. The assessment of the reliability of such power electronic components is a key element for the qualification process. In this study we focused on the reliability of the MOSFET gate oxide which is known to be the more fragile part of these components.
Keywords
MOSFET; avionics; semiconductor device reliability; silicon compounds; MOSFET; SiC; electrical aircraft; gate oxide reliability assessment; high temperature aeronautic applications; power electronic components; power switches; qualification process; Aircraft; Human computer interaction; Logic gates; MOSFET; Monitoring; Reliability; Voltage measurement; Accelerated Aging Tests; Acceleration Factors; Gate Oxide; MOSFET; Reliability Assessment; Silicon Carbide;
fLanguage
English
Publisher
ieee
Conference_Titel
ECCE Asia Downunder (ECCE Asia), 2013 IEEE
Conference_Location
Melbourne, VIC
Print_ISBN
978-1-4799-0483-9
Type
conf
DOI
10.1109/ECCE-Asia.2013.6579125
Filename
6579125
Link To Document