DocumentCode
2888506
Title
A 48ps ECL in a self-aligned bipolar technology
Author
Washio, K. ; Nakamura, T. ; Nakazato, Kazuo ; Hayashida, T.
Author_Institution
Hitachi Central Research Laboratory, Tokyo, Japan
Volume
XXX
fYear
1987
fDate
0-0 Feb. 1987
Firstpage
58
Lastpage
59
Abstract
A polysilicon edge base contact bipolar technology with a gate array of 48ps and a mixed ECL-I2L frequency divider operating at 10GHz will be described.
Keywords
Circuits; Delay effects; Electrodes; Flip-flops; Frequency conversion; Isolation technology; Laboratories; Parasitic capacitance; Resistors; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1987 IEEE International
Conference_Location
New York, NY, USA
Type
conf
DOI
10.1109/ISSCC.1987.1157152
Filename
1157152
Link To Document