DocumentCode :
2888506
Title :
A 48ps ECL in a self-aligned bipolar technology
Author :
Washio, K. ; Nakamura, T. ; Nakazato, Kazuo ; Hayashida, T.
Author_Institution :
Hitachi Central Research Laboratory, Tokyo, Japan
Volume :
XXX
fYear :
1987
fDate :
0-0 Feb. 1987
Firstpage :
58
Lastpage :
59
Abstract :
A polysilicon edge base contact bipolar technology with a gate array of 48ps and a mixed ECL-I2L frequency divider operating at 10GHz will be described.
Keywords :
Circuits; Delay effects; Electrodes; Flip-flops; Frequency conversion; Isolation technology; Laboratories; Parasitic capacitance; Resistors; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1987 IEEE International
Conference_Location :
New York, NY, USA
Type :
conf
DOI :
10.1109/ISSCC.1987.1157152
Filename :
1157152
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2888506
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