Title :
A 70ns 4Mb DRAM in a 300mil DIP using 4-layer poly
Author :
Mochizuki, Hidehiko ; Kodama, Yuetsu ; Nakano, T. ; Ema, T. ; Yabu, T.
Author_Institution :
Fujitsu MOS Memory Division
Keywords :
Bonding; CMOS technology; Clocks; Content addressable storage; Counting circuits; Electronics packaging; Radio control; Random access memory; Size control;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1987 IEEE International
Conference_Location :
New York, NY, USA
DOI :
10.1109/ISSCC.1987.1157161
