DocumentCode
2888780
Title
Competing technologies for high-speed digital systems
Author
Stewart, R.
Author_Institution
RCA Laboratories, Somerville, NJ
Volume
XXX
fYear
1987
fDate
0-0 Feb. 1987
Firstpage
240
Lastpage
241
Abstract
Several new technologies, including sub-micron CMOS, SOI/ SMOS, BiCMOS GaAs and advanced bipolar ECL, are being developed for the super-fast ULSI digital system of the ´90s. . . The panel will discuss whether the continued scaling of bulk CMOS will be adequate or whether a change over to technologies such as SOI or GaAs will be required . . . Meaningful measures for comparing these technologies will also be assessed.
Keywords
BiCMOS integrated circuits; CMOS process; CMOS technology; Delay; Digital systems; FETs; Gallium arsenide; Large scale integration; Power dissipation; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1987 IEEE International
Conference_Location
New York, NY, USA
Type
conf
DOI
10.1109/ISSCC.1987.1157166
Filename
1157166
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