Scaling consideration on local hotspot for Si MOSFETs - for device length scale typically larger than 100 nm

Non-equilibrium thermal characteristics in Si MOSFETs are considered. Both lumped and rigorous electro-thermal model are deployed to examine the device lattice and electron temperatures. Non-equilibrium nature of electrons and phonons becomes important for devices with gate length typically shorter than 10^-6 m. Lumped model cannot capture the local heat generation distribution at the device level. Further discussion on the heat generation characteristics revealed that the hotspot predictions of devices typically shorter than 200 nm needs different strategy from larger devices.