Title :
A 256K SRAM with on-chip power supply conversion
Author :
Roberts, A. ; Dreibelbis, J. ; Braceras, G. ; Gabric, J. ; Gilbert, L. ; Goodwin, R. ; Hedberg, E. ; Maffitt, T. ; Meuniar, L. ; Moran, D. ; Phuong Nguyen ; Reed, D. ; Reismiller, D. ; Sasaki, Ryoichi
Author_Institution :
IBM General Technical Division, Essex Junction, VT, USA
Abstract :
A 47.2mm2SRAM utilizing an on-chip power supply conversion and allowing full synchronous operation at either 5.0V or 3.3V pin voltage without performance penalty will be discussed. The chip with a six-device cell size of 109μm2has been built in a 0.7μm CMOS DRAM technology with silicides and double level metal. Access times is 30ns, with less than 100mA active current consumption.
Keywords :
Batteries; CMOS process; Capacitance; Detectors; Driver circuits; Emergency power supplies; Power supplies; Random access memory; Switches; Voltage control;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1987 IEEE International
Conference_Location :
New York, NY, USA
DOI :
10.1109/ISSCC.1987.1157185
