High-speed direct modulation unidirectional emission microring lasers

Author

Xiao-Meng Lv ; Yong-Zhen Huang ; Ling-Xiu Zou ; Heng Long ; Jin-Long Xiao ; Yue-De Yang ; Yun Du

Author_Institution

State Key Lab. on Integrated Optoelectron., Inst. of Semicond., Beijing, China

Volume

49

Issue

20

fYear

2013

fDate

September 26 2013

Firstpage

1290

Lastpage

1291

Abstract

A InAlGaAs/InP microring laser with a ring width of 5 μm and an external radius of 10 μm, connected with a 2 μm-wide output waveguide, is fabricated by the planar technology process. Continuous-wave lasing operation is realised with a threshold current of 3 mA at 298 K, and 3 dB bandwidths of 10.8 and 8.7 GHz are obtained at the injection currents of 12 mA at 291 and 298 K, respectively.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser beams; microcavity lasers; optical fabrication; optical modulation; optical planar waveguides; quantum well lasers; ring lasers; waveguide lasers; InAlGaAs-InP; continuous wave lasing operation; current 12 mA; current 3 mA; external radius; frequency 10.8 GHz; frequency 8.7 GHz; high-speed direct modulation; injection currents; output waveguide; planar technology; radius 10 mum; ring width; size 2 mum; size 5 mum; temperature 291 K; temperature 298 K; threshold current; unidirectional emission microring lasers;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el.2013.1748

Filename

6612836