DocumentCode :
2889735
Title :
A 25ns 1Mb CMOS SRAM
Author :
Ohtani, T. ; Hashimoto, Koji ; Matsui, Masaki ; Tsujimoto, J. ; Iwai, Hisato ; Saitoh, Masatoshi ; Shibata, Hajime ; Sasaki, Hiromu ; Isobe, M. ; Matsunaga, J. ; Iizuka, Tetsuya
Author_Institution :
Toshiba Semiconductor Device Engineering Laboratory, Kanagawa, Japan
Volume :
XXX
fYear :
1987
fDate :
0-0 Feb. 1987
Firstpage :
264
Lastpage :
265
Keywords :
Aluminum; CMOS process; CMOS technology; Circuits; Delay; Energy consumption; MOSFETs; Random access memory; Read-write memory; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1987 IEEE International
Conference_Location :
New York, NY, USA
Type :
conf
DOI :
10.1109/ISSCC.1987.1157219
Filename :
1157219
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2889735
