Title :
A Four-Resonant-Tunneling-Diode (4RTD) NAND/NOR Logic Gate
Author :
Waho, T. ; Yamada, A. ; Okuyama, H. ; Khorenko, V. ; Do, T. ; Prost, W.
Author_Institution :
Dept. of Electr. & Electron. Eng., Sophia Univ., Tokyo
Abstract :
A NAND/NOR logic gate using four resonant-tunneling diodes (RTD´s), which is introduced by the analogy of RTD current-voltage characteristics to those of superconducting Josephson junctions (JJ´s), has been investigated. The NAND/NOR function is obtained by a simple configuration consisting of four RTD´s without using any conventional transistors, such as HEMT´s or HBT´s. The operation principle is analyzed by a graphical method, and a condition required for a normal logic operation is clarified. A NAND/NOR circuit was fabricated by using an InP technology. The experimental result agrees well with our circuit simulation
Keywords :
NAND circuits; graph theory; indium compounds; logic gates; resonant tunnelling diodes; superconducting junction devices; superconducting logic circuits; InP; InP technology; NAND/NOR circuit; NAND/NOR logic gate; RTD; current-voltage characteristics; four-resonant-tunneling-diode; graphical method; normal logic operation; superconducting Josephson junctions; Circuit simulation; Current-voltage characteristics; Diodes; HEMTs; Josephson junctions; Logic circuits; Logic gates; Superconducting integrated circuits; Superconducting logic circuits; Switches;
Conference_Titel :
Circuits and Systems, 2007. ISCAS 2007. IEEE International Symposium on
Conference_Location :
New Orleans, LA
Print_ISBN :
1-4244-0920-9
Electronic_ISBN :
1-4244-0921-7
DOI :
10.1109/ISCAS.2007.378238
