A Four-Resonant-Tunneling-Diode (4RTD) NAND/NOR Logic Gate

Author

Waho, T. ; Yamada, A. ; Okuyama, H. ; Khorenko, V. ; Do, T. ; Prost, W.

Author_Institution

Dept. of Electr. & Electron. Eng., Sophia Univ., Tokyo

fYear

2007

fDate

27-30 May 2007

Firstpage

129

Lastpage

132

Abstract

A NAND/NOR logic gate using four resonant-tunneling diodes (RTD´s), which is introduced by the analogy of RTD current-voltage characteristics to those of superconducting Josephson junctions (JJ´s), has been investigated. The NAND/NOR function is obtained by a simple configuration consisting of four RTD´s without using any conventional transistors, such as HEMT´s or HBT´s. The operation principle is analyzed by a graphical method, and a condition required for a normal logic operation is clarified. A NAND/NOR circuit was fabricated by using an InP technology. The experimental result agrees well with our circuit simulation

Keywords

NAND circuits; graph theory; indium compounds; logic gates; resonant tunnelling diodes; superconducting junction devices; superconducting logic circuits; InP; InP technology; NAND/NOR circuit; NAND/NOR logic gate; RTD; current-voltage characteristics; four-resonant-tunneling-diode; graphical method; normal logic operation; superconducting Josephson junctions; Circuit simulation; Current-voltage characteristics; Diodes; HEMTs; Josephson junctions; Logic circuits; Logic gates; Superconducting integrated circuits; Superconducting logic circuits; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2007. ISCAS 2007. IEEE International Symposium on

Conference_Location

New Orleans, LA

Print_ISBN

1-4244-0920-9

Electronic_ISBN

1-4244-0921-7

Type

conf

DOI

10.1109/ISCAS.2007.378238

Filename

4252588