• DocumentCode
    2890290
  • Title

    Goals for a basic level IGBT model with easy parameter extraction

  • Author

    Lauritzen, Peter O. ; Andersen, Gert K. ; Perera, P. D Chandana ; Subramanian, Ramanathan ; Bhat, K.N.

  • Author_Institution
    Washington Univ., Seattle, WA, USA
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    91
  • Lastpage
    96
  • Abstract
    Three models were evaluated as possible “basic” level IGBT models, and none were found to be satisfactory. Specific goals for simple parameter extraction are proposed as the primary criteria in the development of basic IGBT models. A new basic model was developed which offers promising results. Performance can be improved with additional parameter optimization
  • Keywords
    insulated gate bipolar transistors; semiconductor device models; basic level IGBT model; basic model; parameter extraction; parameter optimization; Circuit simulation; Equations; Insulated gate bipolar transistors; Libraries; MOSFET circuits; Parameter extraction; Power engineering and energy; Power semiconductor devices; SPICE; Tail;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computers in Power Electronics, 2000. COMPEL 2000. The 7th Workshop on
  • Conference_Location
    Blacksburg, VA
  • Print_ISBN
    0-7803-6561-5
  • Type

    conf

  • DOI
    10.1109/CIPE.2000.904697
  • Filename
    904697
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2890290