Title :
Behavior analysis of the IGBT in ZCS commutation based in a soft modeling concept
Author :
Claudio, A. ; Cotorogea, M. ; Aguayo, J. ; Vela, L.G.
Author_Institution :
Power Electron. Group, Nat. Center for Res. & Technol. Dev., Cuernavaca, Mexico
Abstract :
This work presents a study of the insulated gate bipolar transistor (IGBT) behavior in ZC soft switching mode. This analysis is based on a soft modeling concept of power electronics devices, which gives important knowledge of the semiconductor, normally not accessed by experimental means and addressed to the circuit users. For example the carrier concentration at emitter end of the base, the instantaneous excess charge, the MOS and bipolar current and voltage distributions are available. A simple analytical model (soft modeling) taking into account the essential physical phenomena has been developed for the IGBT in MATLAB, as a compromise between the ideal switch and the complex models applied to components design. The simulation results obtained with soft modeling will be used to study the commutation behavior of the IGBT under zero current switch conditions
Keywords :
bipolar transistor switches; commutation; electronic engineering computing; insulated gate bipolar transistors; power bipolar transistors; power engineering computing; power semiconductor switches; semiconductor device models; switching circuits; IGBT behavior analysis; MATLAB; ZCS commutation; carrier concentration; computer simulation; current distributions; instantaneous excess charge; power electronics devices; soft modelling concept; soft switching; voltage distributions; Analytical models; Circuit simulation; Circuit testing; Insulated gate bipolar transistors; Mathematical model; Physics; Power electronics; Power semiconductor switches; Switching circuits; Zero current switching;
Conference_Titel :
Computers in Power Electronics, 2000. COMPEL 2000. The 7th Workshop on
Conference_Location :
Blacksburg, VA
Print_ISBN :
0-7803-6561-5
DOI :
10.1109/CIPE.2000.904698
