Title :
Analytical GTO turn-off model under snubberless turn-off condition
Author :
Li, Xuening ; Huang, A.Q. ; Li, Yuxin
Author_Institution :
Center for Power Electron. Syst., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
Abstract :
Based on the analysis of numerical simulation results, an analytical turn-off model for the gate turn-off thyristor (GTO) under snubberless condition is developed. The turn-off process predicted by the analytical model is in good agreement with numerical simulation and experimental results
Keywords :
numerical analysis; semiconductor device models; switching; thyristors; analytical GTO turn-off model; numerical simulation; snubberless turn-off condition; thyristors; turn-off process; Analytical models; Anodes; Cathodes; Charge carrier processes; Current density; Insulated gate bipolar transistors; Numerical simulation; Power system modeling; Thyristors; Voltage;
Conference_Titel :
Computers in Power Electronics, 2000. COMPEL 2000. The 7th Workshop on
Conference_Location :
Blacksburg, VA
Print_ISBN :
0-7803-6561-5
DOI :
10.1109/CIPE.2000.904699
