DocumentCode :
2890323
Title :
A novel power diode model for circuit simulation
Author :
Bai, Yuming ; Huang, Alex Q. ; Xu, Zhenxue
Author_Institution :
Bradley Dept. of Electr. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
fYear :
2000
fDate :
2000
Firstpage :
108
Lastpage :
113
Abstract :
This paper presents a novel hybrid power diode model for circuit simulation. All parameters in this model can be determined experimentally. The performance of the model under different operation conditions are analyzed and compared with the experimental results. The model is implemented as a MAST template in the SaberTM simulator exhibiting much faster simulation speed compared with the physics-based diode model while maintains good performance
Keywords :
circuit simulation; power semiconductor diodes; semiconductor device models; MAST template; Saber; circuit simulation; computer simulation; modelling performance; operation conditions; power diode model; Capacitors; Circuit simulation; Contact resistance; Equations; Power electronics; Power system modeling; Resistors; Semiconductor diodes; Thermal resistance; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computers in Power Electronics, 2000. COMPEL 2000. The 7th Workshop on
Conference_Location :
Blacksburg, VA
Print_ISBN :
0-7803-6561-5
Type :
conf
DOI :
10.1109/CIPE.2000.904700
Filename :
904700
Link To Document :
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