DocumentCode
2890338
Title
Physically based models of high power semiconductors including transient thermal behavior
Author
Schröder, Stefan ; De Doncker, Rik W.
Author_Institution
Inst. for Power Electron. & Electr. Drives, Tech. Hochschule Aachen, Germany
fYear
2000
fDate
2000
Firstpage
114
Lastpage
117
Abstract
Circuit simulation is a powerful tool for the design of high power converters, if suitable device models exist. Unfortunately, the commercially available circuit simulators do not have accurate models for high power semiconductors. Therefore, new device models are developed for power diodes and thyristor based devices, such as GTO, IGCT and MTO. These models are based on semiconductor physics, which guarantees a wide range of validity. Electrical and thermal behavior is implemented, which allows transient temperature simulation. The models are programmed in the C++ language and are implemented in the widely used circuit simulator PSpice using the Device Equation Options. Simulation results are compared with measurements
Keywords
SPICE; circuit simulation; power semiconductor devices; semiconductor device models; thermal analysis; C++ language; GTO; IGCT; MTO; PSpice; circuit simulation; computer simulation; high power semiconductors; physically based models; thermal behavior; thyristor based devices; transient temperature simulation; transient thermal behavior; Charge carrier processes; Circuit simulation; Differential equations; Physics; Power electronics; Semiconductor devices; Semiconductor diodes; Temperature; Thyristors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Computers in Power Electronics, 2000. COMPEL 2000. The 7th Workshop on
Conference_Location
Blacksburg, VA
Print_ISBN
0-7803-6561-5
Type
conf
DOI
10.1109/CIPE.2000.904701
Filename
904701
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