• DocumentCode
    2890338
  • Title

    Physically based models of high power semiconductors including transient thermal behavior

  • Author

    Schröder, Stefan ; De Doncker, Rik W.

  • Author_Institution
    Inst. for Power Electron. & Electr. Drives, Tech. Hochschule Aachen, Germany
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    114
  • Lastpage
    117
  • Abstract
    Circuit simulation is a powerful tool for the design of high power converters, if suitable device models exist. Unfortunately, the commercially available circuit simulators do not have accurate models for high power semiconductors. Therefore, new device models are developed for power diodes and thyristor based devices, such as GTO, IGCT and MTO. These models are based on semiconductor physics, which guarantees a wide range of validity. Electrical and thermal behavior is implemented, which allows transient temperature simulation. The models are programmed in the C++ language and are implemented in the widely used circuit simulator PSpice using the Device Equation Options. Simulation results are compared with measurements
  • Keywords
    SPICE; circuit simulation; power semiconductor devices; semiconductor device models; thermal analysis; C++ language; GTO; IGCT; MTO; PSpice; circuit simulation; computer simulation; high power semiconductors; physically based models; thermal behavior; thyristor based devices; transient temperature simulation; transient thermal behavior; Charge carrier processes; Circuit simulation; Differential equations; Physics; Power electronics; Semiconductor devices; Semiconductor diodes; Temperature; Thyristors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computers in Power Electronics, 2000. COMPEL 2000. The 7th Workshop on
  • Conference_Location
    Blacksburg, VA
  • Print_ISBN
    0-7803-6561-5
  • Type

    conf

  • DOI
    10.1109/CIPE.2000.904701
  • Filename
    904701