Lifetime measurements of high polarization strained-superlattice gallium arsenide at beam current >1 milliamp using a new 100kv load lock photogun

Author

Grames, J. ; Adderley, P. ; Brittian, J. ; Clark, J. ; Hansknecht, J. ; Machie, D. ; Poelker, M. ; Stutzman, M.L. ; Suleiman, R. ; Surles-Law, K.

Author_Institution

Jefferson Lab., Newport News

fYear

2007

fDate

25-29 June 2007

Firstpage

3130

Lastpage

3132

Abstract

A new GaAs DC high voltage load lock photogun has been constructed at Jefferson Laboratory (JLab), with improved vacuum and photocathode preparation capabilities. As reported previously, this gun was used to study photocathode lifetime with bulk GaAs at DC beam currents between 1 and 10 mA. In this submission, lifetime measurements were performed using high polarization strained-superlattice GaAs photocathode material at beam currents to 1 mA, with near bandgap light from a fiber based drive laser having picosecond optical pulses and RF time structure.

Keywords

III-V semiconductors; gallium arsenide; high-speed optical techniques; photocathodes; photoemission; semiconductor superlattices; spin polarised electron emission; DC beam currents; DC high voltage photogun; GaAs; Jefferson laboratory; RF time structure; bandgap light; beam current; current 1 mA to 10 mA; fiber based drive laser; high polarization strained-superlattice; load lock photogun; photocathode lifetime; photocathode preparation; picosecond optical pulses; vacuum preparation; voltage 100 kV; Cathodes; Gallium arsenide; Laboratories; Laser beams; Lifetime estimation; Optical fiber polarization; Optical materials; Performance evaluation; Photonic band gap; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Particle Accelerator Conference, 2007. PAC. IEEE

Conference_Location

Albuquerque, NM

Print_ISBN

978-1-4244-0916-7

Type

conf

DOI

10.1109/PAC.2007.4440691

Filename

4440691