Title :
A comparison of the diffusion-limited semiconductor junction diode and the space-charge-limited dielectric diode
Author_Institution :
University of Birmingham, Birmingham, England
Keywords :
Capacitance; Dielectric devices; Electrodes; Electron traps; Frequency; Noise level; Semiconductor device noise; Semiconductor diodes; Temperature sensors; Voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1961 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1961.1157313
