Lens-integrated on-chip antennas for THz direct detectors in SiGe HBT technology

Author

Grzyb, Janusz ; Al Hadi, Richard ; Pfeiffer, Ullrich R.

Author_Institution

IHCT, Bergische Univ., Wuppertal, Germany

fYear

2013

fDate

7-13 July 2013

Firstpage

2265

Lastpage

2266

Abstract

This paper reports on the design of broadband lens-integrated differentially driven wire ring on-chip antennas for THz direct detectors in a state-of-the-art SiGe HBT technology. The antenna provides wideband detector operation on a high-permittivity substrate at least within the measured 650-1028 GHz, high radiation efficiency at THz frequencies on a bulk silicon substrate, layout fully compatible with silicon design rules, rotationally symmetric Gaussian radiation patterns with a -20 dB sidelobe level.

Keywords

Ge-Si alloys; antenna radiation patterns; broadband antennas; heterojunction bipolar transistors; permittivity; submillimetre wave antennas; submillimetre wave detectors; terahertz wave detectors; Gaussian radiation patterns; Si; SiGe; SiGe HBT technology; THz direct detectors; broadband lens; bulk silicon substrate; frequency 650 GHz to 1028 GHz; lens-integrated on-chip antennas; permittivity substrate; radiation efficiency; silicon design; wideband detector; wire ring on-chip antennas; Antenna measurements; Arrays; Broadband antennas; Detectors; Lenses; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Antennas and Propagation Society International Symposium (APSURSI), 2013 IEEE

Conference_Location

Orlando, FL

ISSN

1522-3965

Print_ISBN

978-1-4673-5315-1

Type

conf

DOI

10.1109/APS.2013.6711791

Filename

6711791