DocumentCode :
2892008
Title :
Properties and applications of diffused silicon transistors using epitaxial techniques
Author :
Cagle, W. ; Patterson, Howard ; Talley, H.
Author_Institution :
Bell Labs., Whippany, NJ, USA and Bell Labs., Allentown, PA, USA
Volume :
IV
fYear :
1961
fDate :
15-17 Feb. 1961
Firstpage :
60
Lastpage :
61
Keywords :
Charge carrier lifetime; Chemical vapor deposition; Conductivity; Degradation; Gold; Laboratories; Silicon; Switching circuits; Telephony; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1961 IEEE International
Conference_Location :
Philadelphia, PA, USA
Type :
conf
DOI :
10.1109/ISSCC.1961.1157337
Filename :
1157337
Link To Document :
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