Title :
Temperature effects on GTO characteristics
Author :
Hudgins, J.L. ; Godbold, C.V. ; Portnoy, W.M. ; Mueller, O.M.
Author_Institution :
Dept. of Electr. & Comput. Eng., South Carolina Univ., Columbia, SC, USA
Abstract :
The turn-off characteristics and forward conduction drop of gate turn-off thyristors (GTOs) are examined over a temperature range of -150 to 125°C. The forward conduction drop and dynamic performance of these GTOs are discussed and compared to the behavior of other types of thyristors, such as SCRs and MOS-controlled thyristors (MCTs). An analytical description of the forward conduction voltage drop is developed. Particular emphasis is on the low-temperature behavior of the GTOs as it relates to high-temperature superconducting (HTS) power electronics applications
Keywords :
carrier lifetime; carrier mobility; semiconductor device models; semiconductor device testing; thermal analysis; thyristors; -150 to 125 C; GTO; MCT; MOS-controlled thyristor; SCR; dynamic performance; forward conduction drop; gate turn-off thyristors; high-temperature superconductors; low-temperature behavior; power electronics; temperature effects; temperature range; turn-off characteristics; Anodes; Cryogenics; Diodes; Drives; High temperature superconductors; MOSFETs; Power electronics; Testing; Thyristors; Voltage;
Conference_Titel :
Industry Applications Society Annual Meeting, 1994., Conference Record of the 1994 IEEE
Conference_Location :
Denver, CO
Print_ISBN :
0-7803-1993-1
DOI :
10.1109/IAS.1994.377578
