Technology for low gate current AlInAs/InP heterojunction FETs

Author

Naït-Zerrad, K. ; Post, G. ; Balestra, F.

Author_Institution

France Telecom, Bagneux, France

fYear

1993

fDate

19-22 Apr 1993

Firstpage

409

Lastpage

412

Abstract

Monolithic integration of pin-FET circuits on InP is a promising technology for low-cost telecommunication photoreceivers. A very low gate leakage current is desirable in the first amplifier stage, and this motivated the present work on InP channels, as an alternative to the more popular InGaAs-based high electron mobility transistor (HEMT) and HFET structures which exhibit gate leakage related to avalanching in the low bandgap channel. Very low gate leakage current in InP channel HFETs has been achieved by careful device processing. The contribution of the gate current noise of the InP HFET is then very low and the level of the total input noise density may be lower than the one measured on InGaAs/InP monolithic photoreceivers (A. Scavennec et al., 1990). The noise measurements are reported

Keywords

III-V semiconductors; aluminium compounds; indium compounds; integrated optoelectronics; junction gate field effect transistors; leakage currents; semiconductor device noise; AlInAs-InP; first amplifier stage; gate current noise; low gate current AlInAs/InP heterojunction FETs; low-cost telecommunication photoreceivers; pin-FET circuits; semiconductor; total input noise density; very low gate leakage current; FETs; Gate leakage; HEMTs; Heterojunctions; Indium phosphide; Leakage current; MODFETs; Monolithic integrated circuits; Noise level; Noise measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on

Conference_Location

Paris

Print_ISBN

0-7803-0993-6

Type

conf

DOI

10.1109/ICIPRM.1993.380597

Filename

380597