Title :
On the modelling of sub-micrometric pseudomorphic GaAs/In0.15 Ga0.85As/AlxGa1-xAs HEMTs
Author :
Santos, H. Abreu
Author_Institution :
Inst. Superior Tecnico, Lisbon, Portugal
Abstract :
A model for the transport of 2D/3D electron gases by an electric field is presented. It considers 2D/3D particle interchanges by introducing an artificial scattering event that involves two parameters to be adjusted by the experimental stationary velocity-field relationship. These parameters are the rate of this scattering and the energy in the well at which it takes place. Using this model we investigate non stationary effects in sub-micrometer gate length devices. We conclude that though they exist under the gate, these effects are especially important in the high field region at the n+ n drain access that has to be carefully modelled
Keywords :
III-V semiconductors; aluminium compounds; electron gas; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device models; two-dimensional electron gas; 2D electron gases; 3D electron gases; GaAs-In0.15Ga0.85As-AlGaAs; artificial scattering event; electric field; high field region; modelling; nonstationary effects; particle interchanges; pseudomorphic GaAs/In0.15Ga0.85As/Alx Ga1-xAs HEMTs; stationary velocity-field relationship; sub-micrometer gate length devices; transport; well; Acoustic scattering; Electrons; Gallium arsenide; HEMTs; Lattices; MODFETs; Monte Carlo methods; Optical scattering; Particle scattering; Temperature;
Conference_Titel :
Electrotechnical Conference, 1994. Proceedings., 7th Mediterranean
Conference_Location :
Antalya
Print_ISBN :
0-7803-1772-6
DOI :
10.1109/MELCON.1994.381018
