• DocumentCode
    2893579
  • Title

    Device Models, Circuit Simulation, And Computer-controlled Measurements For The IGBT

  • Author

    Hefner, Allen R., Jr.

  • Author_Institution
    National Institute Of Standards And Technology
  • fYear
    1990
  • fDate
    5-7 Aug 1990
  • Firstpage
    233
  • Lastpage
    243
  • Keywords
    Analytical models; Bipolar transistors; Capacitance; Circuit simulation; Equivalent circuits; Feedback circuits; Insulated gate bipolar transistors; MOSFET circuits; NIST; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computers in Power Electronics, 1990 IEEE Workshop on
  • Print_ISBN
    0-87942-571-1
  • Type

    conf

  • DOI
    10.1109/CIPE.1990.657943
  • Filename
    657943
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2893579