Title :
Device Models, Circuit Simulation, And Computer-controlled Measurements For The IGBT
Author :
Hefner, Allen R., Jr.
Author_Institution :
National Institute Of Standards And Technology
Keywords :
Analytical models; Bipolar transistors; Capacitance; Circuit simulation; Equivalent circuits; Feedback circuits; Insulated gate bipolar transistors; MOSFET circuits; NIST; Voltage;
Conference_Titel :
Computers in Power Electronics, 1990 IEEE Workshop on
Print_ISBN :
0-87942-571-1
DOI :
10.1109/CIPE.1990.657943
