DocumentCode
2894030
Title
A 12b 1.25GS/s DAC in 90nm CMOS with >70dB SFDR up to 500MHz
Author
Tseng, Wei-Hsin ; Fan, Chi-Wei ; Wu, Jieh-Tsorng
Author_Institution
Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear
2011
fDate
20-24 Feb. 2011
Firstpage
192
Lastpage
194
Abstract
The current-steering DACs are commonly used in generating high-frequency signals. A current-steering DAC comprises current cells of various sizes. Each of them contains a current source and a current switch. The DAC static linearity, specified as differential nonlinearity (DNL) and integral nonlinearity (INL), is mainly determined by the mutual matching and the output resistance of the current sources. The DAC also exhibits dynamic distortion. It is manifested as spurious-free dynamic range (SFDR) degradation. The SFDR decreases rapidly with increasing input frequency. There are two major sources of dynamic distortion, code-dependent switching transients (CDST) and code-dependent output-loading variation (CDLV). Switching transients are temporal disturbances in DAC out put when the current switches in current cells make transitions. The output load ing of a DAC varies when the output impedances of current cells change due to the transposition of their current switches. This DAC applies a digital random return-to-zero (DRRZ) technique to mitigate the CDST effect. Compact current cells are designed to minimize the CDLV effect. The current mismatches of the current cells are corrected by background calibration.
Keywords
CMOS integrated circuits; constant current sources; digital-analogue conversion; transient analysis; CDST effect mitigation; CMOS process; SFDR; code-dependent output-loading variation; code-dependent switching transients; current source; current switch; current-steering DAC; differential nonlinearity; digital random return-to-zero technique; high-frequency signal generation; integral nonlinearity; size 90 nm; spurious-free dynamic range degradation; word length 12 bit; CMOS integrated circuits; Calibration; Current measurement; Frequency measurement; MOSFETs; Semiconductor device measurement; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2011 IEEE International
Conference_Location
San Francisco, CA
ISSN
0193-6530
Print_ISBN
978-1-61284-303-2
Type
conf
DOI
10.1109/ISSCC.2011.5746278
Filename
5746278
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