• DocumentCode
    2894030
  • Title

    A 12b 1.25GS/s DAC in 90nm CMOS with >70dB SFDR up to 500MHz

  • Author

    Tseng, Wei-Hsin ; Fan, Chi-Wei ; Wu, Jieh-Tsorng

  • Author_Institution
    Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • fYear
    2011
  • fDate
    20-24 Feb. 2011
  • Firstpage
    192
  • Lastpage
    194
  • Abstract
    The current-steering DACs are commonly used in generating high-frequency signals. A current-steering DAC comprises current cells of various sizes. Each of them contains a current source and a current switch. The DAC static linearity, specified as differential nonlinearity (DNL) and integral nonlinearity (INL), is mainly determined by the mutual matching and the output resistance of the current sources. The DAC also exhibits dynamic distortion. It is manifested as spurious-free dynamic range (SFDR) degradation. The SFDR decreases rapidly with increasing input frequency. There are two major sources of dynamic distortion, code-dependent switching transients (CDST) and code-dependent output-loading variation (CDLV). Switching transients are temporal disturbances in DAC out put when the current switches in current cells make transitions. The output load ing of a DAC varies when the output impedances of current cells change due to the transposition of their current switches. This DAC applies a digital random return-to-zero (DRRZ) technique to mitigate the CDST effect. Compact current cells are designed to minimize the CDLV effect. The current mismatches of the current cells are corrected by background calibration.
  • Keywords
    CMOS integrated circuits; constant current sources; digital-analogue conversion; transient analysis; CDST effect mitigation; CMOS process; SFDR; code-dependent output-loading variation; code-dependent switching transients; current source; current switch; current-steering DAC; differential nonlinearity; digital random return-to-zero technique; high-frequency signal generation; integral nonlinearity; size 90 nm; spurious-free dynamic range degradation; word length 12 bit; CMOS integrated circuits; Calibration; Current measurement; Frequency measurement; MOSFETs; Semiconductor device measurement; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2011 IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    0193-6530
  • Print_ISBN
    978-1-61284-303-2
  • Type

    conf

  • DOI
    10.1109/ISSCC.2011.5746278
  • Filename
    5746278