DocumentCode
2894150
Title
95%-lower-BER 43%-lower-power intelligent solid-state drive (SSD) with asymmetric coding and stripe pattern elimination algorithm
Author
Tanakamaru, Shuhei ; Hung, Chinglin ; Esumi, Atsushi ; Ito, Mitsuyoshi ; Li, Kai ; Takeuchi, Ken
Author_Institution
Univ. of Tokyo, Tokyo, Japan
fYear
2011
fDate
20-24 Feb. 2011
Firstpage
204
Lastpage
206
Abstract
This paper presents intelligent solid-state drives (SSDs), which decrease memory errors by 95% and reduce power consumption by 43%. Figure 11.4.1 shows the measured memory cell error in the data retention and program disturb of 4X, 3X and 2Xnm NAND flash memories. As the memory size decreases, both data retention and program disturb errors increase due to the interference, random telegraph noise and reduced electrons. In the scaled NAND, the electric field in the channel increases and the program disturb due to GIDL-induced hot electron injection becomes more significant (Fig. 11.4.1(c)). In conventional SSDs, 20 to 40 b correction per 1 KB codeword error-correcting code (ECC) is used to correct errors. As stronger codes, such as LDPC, are developed, the capability of ECC is close to the Shannon limit of a few percent error correction. Thus, the additional high-reliability scheme is required. As the feature size decreases, the power consumption increases due to the increased bit-line capacitance of NAND. As the space between bitlines decreases, the inter bitline capacitance increases. To overcome reliability and power problems in SSDs, this paper describes two technologies. Asymmetric coding improves memory-cell reliability by 95% without access-time penalty. Stripe pattern elimination algorithm eliminates the worst program data pattern and decreases the power during the program by 43% without circuit area or access time overhead.
Keywords
NAND circuits; error correction codes; error statistics; flash memories; integrated circuit reliability; low-power electronics; BER; ECC; GIDL-induced hot electron injection; NAND flash memory; Shannon limit; bit-line capacitance; data retention; electric field; error-correcting code; high-reliability scheme; low-power intelligent solid-state drive; memory cell error; memory-cell reliability; power consumption; random telegraph noise; stripe pattern elimination algorithm; word length 20 bit to 40 bit; Capacitance; Computer architecture; Encoding; Flash memory; Measurement uncertainty; Microprocessors; Reliability;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2011 IEEE International
Conference_Location
San Francisco, CA
ISSN
0193-6530
Print_ISBN
978-1-61284-303-2
Type
conf
DOI
10.1109/ISSCC.2011.5746283
Filename
5746283
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