Title :
An offset-tolerant current-sampling-based sense amplifier for Sub-100nA-cell-current nonvolatile memory
Author :
Chang, Meng-Fan ; Shen, Shin-Jang ; Liu, Chia-Chi ; Wu, Che-Wei ; Lin, Yu-Fan ; Wu, Shang-Chi ; Huang, Chia-En ; Lai, Han-Chao ; King, Ya-Chin ; Lin, Chorng-Jung ; Liao, Hung-Jen ; Chih, Yu-Der ; Yamauchi, Hiroyuki
Author_Institution :
Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
In this study, the authors propose a new offset tolerant current-sampling-based SA (CSB-SA) to achieve 7x faster read speed than previous SAs for sensing small ICELL. A fabricated 90nm 512Kb OTP macro, using the CSB-SA and our CMOS-logic compatible OTP cell, achieves 26ns macro random access time for reading sub-200nA lCELL. Measurements also confirmed that this 90nm CSB-SA could achieve sub-100nA sensing.
Keywords :
CMOS logic circuits; operational amplifiers; random-access storage; CMOS-logic compatible OTP cell; CSB-SA; OTP macro; cell-current nonvolatile memory; offset-tolerant current-sampling; one-time programming; random access time; sense amplifier; size 90 nm; storage capacity 512 Kbit; Computer architecture; MOS devices; Microprocessors; Nonvolatile memory; Sensors; Solid state circuits; Switches;
Conference_Titel :
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2011 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-61284-303-2
DOI :
10.1109/ISSCC.2011.5746284
