Title :
Large signal models for junction transistors
Author :
Narud, J. ; Hamilton, Dean ; Lindholm, F.
Author_Institution :
Motorola Semiconductor Products, Inc., Phoenix, AZ, USA
Keywords :
Charge carrier processes; Charge carriers; Degradation; Differential equations; Frequency; Mathematical model; Performance analysis; Semiconductor materials; Space charge; Transient analysis;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1963 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1963.1157447
