DocumentCode :
2894417
Title :
Recent advances in QCL for optoelectronics
Author :
Faist, J.
Author_Institution :
Neuchatel Univ., Switzerland
fYear :
2005
fDate :
12-17 June 2005
Firstpage :
89
Abstract :
The quantum cascade laser based on intersubband transitions in quantum wells is now maturing as a technological device for both physics and applications. It allows design of lasers of widely different wavelengths from the same heterostructure material. Recently, a strong improvement of the laser operating performances has enabled the room temperature operation of continuous wave, single mode, lasers around a wavelength of 5.4 m. These distributed feedback lasers operate with 3-5 mW of output power and a currents well below 1 A. An other fascinating new development has been the realization of terahertz QC lasers. Devices based based on GaAs have reached now operating temperatures higher than 100 K. However, devices based on InGaAs/AlInAs lattice-matched on InP should have the advantage of a stronger optical matrix element and a lower optical phonon scattering rate and therefore should enable operation at higher temperatures.
Keywords :
III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; indium compounds; optoelectronic devices; quantum cascade lasers; semiconductor quantum wells; submillimetre wave lasers; 293 to 298 K; 3 to 5 mW; InGaAs-AlInAs; InP; continuous wave laser; distributed feedback laser; intersubband transitions; laser operating performance; optical matrix element; optical phonon scattering rate; optoelectronics; quantum well; terahertz quantum cascade laser; Distributed feedback devices; Laser feedback; Laser modes; Laser theory; Laser transitions; Optical scattering; Power lasers; Quantum cascade lasers; Quantum well lasers; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Europe, 2005. CLEO/Europe. 2005 Conference on
Print_ISBN :
0-7803-8974-3
Type :
conf
DOI :
10.1109/CLEOE.2005.1567877
Filename :
1567877
Link To Document :
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