DocumentCode :
2894445
Title :
Recent Advances in 3-5 microns InGaAs/InAlAs/InP quantum cascade lasers
Author :
Razeghi, Manijeh ; Evans, Allan ; Slivken, Steven ; Yu, Jae-Su ; Darvish, Shaban ; Gokden, Burc ; Nguyen, Jean
Author_Institution :
Dept. of Electr. Eng. & Comput. Eng., Northwestern Univ., Evanston, IL, USA
fYear :
2005
fDate :
12-17 June 2005
Firstpage :
91
Abstract :
In this paper, we discuss the limiting factors for short-wavelength QCL designs and how the incorporation of strain into the material can help to overcome the electron confinement limitations of QCLs at shorter wavelengths. As QCL designs approach shorter wavelengths, several problems arise, including electron confinement, intervalley leakage, surface plasmon loss, high power density, and non-uniform gain in the waveguide, all of which reduce device performance or even prevent operation completely. Problems associated with electron confinement arise as the upper laser level is pushed closer to the continuum by the wider separation of energy levels required for short-wavelength emission. High lattice and/or electron temperature leads to escape of electrons into the continuum, which manifests as leakage current.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; leakage currents; quantum cascade lasers; surface plasmons; InGaAs-InAlAs-InP; electron confinement limitation; electron temperature; intervalley leakage; leakage current; power density; quantum cascade laser; strain; surface plasmon loss; Capacitive sensors; Electrons; Indium compounds; Indium gallium arsenide; Indium phosphide; Optical materials; Performance gain; Plasmons; Quantum cascade lasers; Surface waves;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Europe, 2005. CLEO/Europe. 2005 Conference on
Print_ISBN :
0-7803-8974-3
Type :
conf
DOI :
10.1109/CLEOE.2005.1567879
Filename :
1567879
Link To Document :
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