DocumentCode :
2894462
Title :
Short wavelength intersubband emission from InAs/AlSb quantum cascade structures
Author :
Barate, D. ; Teissier, R. ; Baranov, A.N.
Author_Institution :
Univ. Montpellier, France
fYear :
2005
fDate :
12-17 June 2005
Firstpage :
92
Abstract :
In this paper InAs/AlSb quantum cascade structures operating at room temperature with peak emission wavelength down to 2.55 μm, the shortest emission wavelength of intersubband transitions reported to date. No degradation in structure performances was observed with the emission wavelength decreasing from 4.5 to 2.55 μm. The obtained results prove the great potential of the InAs/AlSb system for the development of short wavelength QCLs.
Keywords :
III-V semiconductors; aluminium compounds; indium compounds; quantum cascade lasers; 2.55 micron; 293 to 298 K; AlSb quantum cascade structure; InAs-AlSb; intersubband emission; intersubband transition; lnAs quantum cascade structure; quantum cascade laser; Bars; Optical scattering; Power measurement; Quantum cascade lasers; Radiative recombination; Spontaneous emission; Stimulated emission; Substrates; Temperature measurement; Wavelength measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Europe, 2005. CLEO/Europe. 2005 Conference on
Print_ISBN :
0-7803-8974-3
Type :
conf
DOI :
10.1109/CLEOE.2005.1567880
Filename :
1567880
Link To Document :
بازگشت