DocumentCode
2894462
Title
Short wavelength intersubband emission from InAs/AlSb quantum cascade structures
Author
Barate, D. ; Teissier, R. ; Baranov, A.N.
Author_Institution
Univ. Montpellier, France
fYear
2005
fDate
12-17 June 2005
Firstpage
92
Abstract
In this paper InAs/AlSb quantum cascade structures operating at room temperature with peak emission wavelength down to 2.55 μm, the shortest emission wavelength of intersubband transitions reported to date. No degradation in structure performances was observed with the emission wavelength decreasing from 4.5 to 2.55 μm. The obtained results prove the great potential of the InAs/AlSb system for the development of short wavelength QCLs.
Keywords
III-V semiconductors; aluminium compounds; indium compounds; quantum cascade lasers; 2.55 micron; 293 to 298 K; AlSb quantum cascade structure; InAs-AlSb; intersubband emission; intersubband transition; lnAs quantum cascade structure; quantum cascade laser; Bars; Optical scattering; Power measurement; Quantum cascade lasers; Radiative recombination; Spontaneous emission; Stimulated emission; Substrates; Temperature measurement; Wavelength measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Europe, 2005. CLEO/Europe. 2005 Conference on
Print_ISBN
0-7803-8974-3
Type
conf
DOI
10.1109/CLEOE.2005.1567880
Filename
1567880
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