Single mode CW operating InP based quantum dash distributed feedback lasers at 1.5 to 1.9 μm

Author

Kaiser, W. ; Legge, M. ; Somers, A. ; Deubert, S. ; Reithmaier, J.P. ; Forchel, A.

Author_Institution

Technische Phys, Wurzburg Univ., Germany

fYear

2005

fDate

12-17 June 2005

Firstpage

96

Abstract

In this paper the device properties of single mode lasers based on this new quantum-dash material will be presented. The laser structures were grown by solid-source MBE. They consist of a 1.7 μm top InAlAs cladding and a 400 nm thick waveguide layer, which is based on a graded index separate confinement heterostructure (GRINSCH). Laser ridges with a width of 3 μm were defined by photolithography. All the lasers show a very stable single mode emission with side mode suppression ratios (SMSR) well above 45 dB.

Keywords

III-V semiconductors; distributed feedback lasers; indium compounds; laser modes; molecular beam epitaxial growth; optical materials; photolithography; quantum well lasers; waveguide lasers; 1.5 to 1.9 micron; 1.7 micron; 3 micron; 400 nm; InAlAs; InP based quantum dash laser; distributed feedback laser; graded index separate confinement heterostructure; laser ridge; laser structure; photolithography; quantum-dash material; side mode suppression ratio; single mode CW operating laser; single mode emission; solid-source MBE; waveguide layer; Distributed feedback devices; Indium compounds; Indium phosphide; Laser feedback; Laser modes; Optical materials; Quantum dots; Quantum well lasers; Solid lasers; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Europe, 2005. CLEO/Europe. 2005 Conference on

Print_ISBN

0-7803-8974-3

Type

conf

DOI

10.1109/CLEOE.2005.1567884

Filename

1567884