(GaIn)(NAsSb): the challenges and successes for long wavelength lasers

Author

Harris, James S., Jr.

Author_Institution

Solid States & Photonics Lab., Stanford Univ., CA, USA

fYear

2005

fDate

12-17 June 2005

Firstpage

97

Abstract

We have developed a new structure using GaInNAsSb quantum wells (QWs) with strain compensating GaNAs barriers which has produced 1.5 μm lasers with threshold currents of 450 A/cm² and the first 1.5 μm VCSELs. This material is grown by solid source MBE with a RF plasma source and both growth temperature and ion damage from the plasma source have turned out to be critical issues. The paper focuses on the successes to date on long wavelength lasers and integrated photonic crystal structures as well as the remaining challenges to achieve a viable technology for next generation high speed optical networks.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; optical fibre networks; optical materials; photonic crystals; plasma deposition; quantum well lasers; surface emitting lasers; 1.5 micron; GaInNAsSb; RF plasma source; VCSEL; growth temperature; high speed optical network; integrated photonic crystal structure; ion damage; long wavelength laser; quantum well laser; semiconductor barrier; solid source MBE; strain compensation; threshold current; Capacitive sensors; Crystalline materials; Optical materials; Plasma sources; Plasma temperature; Quantum well lasers; Radio frequency; Solids; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Europe, 2005. CLEO/Europe. 2005 Conference on

Print_ISBN

0-7803-8974-3

Type

conf

DOI

10.1109/CLEOE.2005.1567885

Filename

1567885