(GaIn)(NAsSb): the challenges and successes for long wavelength lasers

We have developed a new structure using GaInNAsSb quantum wells (QWs) with strain compensating GaNAs barriers which has produced 1.5 μm lasers with threshold currents of 450 A/cm² and the first 1.5 μm VCSELs. This material is grown by solid source MBE with a RF plasma source and both growth temperature and ion damage from the plasma source have turned out to be critical issues. The paper focuses on the successes to date on long wavelength lasers and integrated photonic crystal structures as well as the remaining challenges to achieve a viable technology for next generation high speed optical networks.