Title :
A 36V JFET-input bipolar operational amplifier with 1μV/°C maximum offset drift and −126dB total harmonic distortion
Author :
Snoeij, Martijn F. ; Ivanov, Mikhail V.
Author_Institution :
Texas Instrum., Erlangen, Germany
Abstract :
A 36V JFET-input bipolar operational amplifier is presented with a maximum off set drift of 1μV/°C over a temperature range of -40 to 125°C, which represents a 3x improvement on the state-of-the-art. This is achieved with a drift-compensating circuit incorporated in the input stage that relies on a wafer-level 2-tem perature laser-trimming method. The opamp has a GBW of 11MHz, a flat-band noise of 5.1nV/vTHz, a slew-rate of 20V/μs, a -126dB (0.00005%) total harmon ic distortion plus noise (THD+N) ratio, and a quiescent current of 1.8mA. This combination of high slew rate and good noise-to-power ratio is accomplished through the use of a linearized class-AB boosting circuit in the input stage.
Keywords :
harmonic distortion; junction gate field effect transistors; laser beam machining; operational amplifiers; JFET-input bipolar operational amplifier; THD; bandwidth 11 MHz; current 1.8 mA; drift-compensating circuit; high slew rate; linearized class-AB boosting circuit; maximum offset drift; noise-to-power ratio; temperature -40 degC to 125 degC; total harmonic distortion; voltage 36 V; wafer-level 2-tem perature laser-trimming method; JFETs; Noise; Operational amplifiers; Temperature dependence; Temperature distribution; Temperature measurement;
Conference_Titel :
Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2011 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-61284-303-2
DOI :
10.1109/ISSCC.2011.5746305
